TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - Prado Millán, Álvaro del
AU  - San Andrés Serrano, Enrique
PY  - 2001
DO  - 10.1063/1.1380992
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59107
T2  - Journal of Applied Physics
AB  - Bulk properties of SiNx:H thin film dielectrics and interface characteristics of SiNx:H/Si devices are studied by a combination of electrical measurements (capacitance-voltage and current-voltage characteristics) and defect spectroscopy (electron spin...
LA  - eng
M2  - 1573
PB  - American Institute of Physics
KW  - Chemical-Vapor-Deposition
KW  - Amorphous-Silicon Nitride
KW  - SiNx-H Films
KW  - Insulator-Semiconductor Structures
KW  - Nitrogen Dangling-Bons
KW  - Dominant Deep Trap
KW  - Cyclotron-Resonance
KW  - Gate Dielectrics
KW  - Infrared-Spectroscopy
KW  - Correlation-Energy.
TI  - Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx : H/Si devices
TY  - journal article
VL  - 90
ER  -