TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
PY  - 2003
DO  - 10.1116/1.1585067
SN  - 1071-1023
UR  - https://hdl.handle.net/20.500.14352/51133
T2  - Journal of Vacuum Science & Technology B
AB  - We present a comparative study of the electrical and structural characteristics of metal-insulator-semiconductor (MIS) devices using SiN1.55:H or SiN1.55:H/SiOx stacks as gate dielectrics, with the aim of improving the thermal stability of the...
M2  - 1306
PB  - AVS Amer Inst. Physics
KW  - Chemical-Vapor-Deposition
KW  - Silicon-Nitride
KW  - Cyclotron-Resonance
KW  - Surface Passivation
KW  - Capacitance-Voltage
KW  - Oxide Films
KW  - Thin-Films
KW  - H Films
KW  - Dielectrics
KW  - Defects.
TI  - Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators
TY  - journal article
VL  - 21
ER  -