RT Journal Article
T1 Eu activation in beta-Ga_2O_3 MOVPE thin films by ion implantation
A1 Peres, M.
A1 Nogales Díaz, Emilio
A1 Méndez Martín, Bianchi
A1 Lorenz, K.
A1 Correira, M. R.
A1 Monteiro, T.
A1 Sedrine, N. Ben
AB In this work, we have established the effects of Eu implantation and annealing on beta-Ga_2O_3 thin films grown by metal organic vapor phase epitaxy (MOVPE) on sapphire substrate. The study is based on the combined information from structural and optical techniques: X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), cathodoluminescence (CL), photoluminescence (PL), and photoluminescence excitation (PLE). The thin films were implanted with a fluence of 1 x 10^15 Eu.cm^-2 and annealed at 900 degrees C. Neither significant changes in peak width or position nor additional peaks related to Eu complexes were detected in the XRD 2 theta-omega scans. RBS results and SRIM simulation are in good agreement, revealing that no Eu diffusion to the surface occurs during annealing. For the used implantation/annealing conditions, the Eu ion penetration depth reached similar to 130 nm, with a maximum concentration at similar to 50 nm. Furthermore, CL and PL/PLE results evidenced the optical activation of the Eu^3+ in the beta-Ga_2O_3 host. The detailed study of the Eu^3+ intra-4f shell transitions revealed that at least one active site is created by the Eu implantation/annealing in beta-Ga_2O_3 thin films grown on sapphire. Independently of the beta-Ga_2O_3 film thickness, well controlled optical activation of implanted Eu was achieved.
PB Electrochemical Society
SN 2162-8769
YR 2019
FD 2019-03-06
LK https://hdl.handle.net/20.500.14352/13255
UL https://hdl.handle.net/20.500.14352/13255
LA eng
NO ©The Author(s) 2019. Published by ECS.The authors acknowledge financial support from FEDER funds through the COMPETE 2020 Programme and National funds through FCT - Portuguese Foundation for Science and Technology (FCT) under the projects UID/CTM/50025/2013, POCI-01-0145-FEDER-028011 & LISBOA-01-0145-FEDER-029666, and UID/FIS/50010/2019. B Mendez and E Nogales are grateful for the financial support from the MINECO (Projects No. MAT-2015-65274-R-FEDER and PCIN-2017-106). We especially thank Dr. Daniela Gogova for providing the as-grown samples of this study, for the availability and the fruitful discussions about β-Ga_2O_3 MOVPE growth.
NO Ministerio de Economía y Competitividad (MINECO)
NO FEDER funds through the COMPETE 2020 Programme
NO National funds through FCT -Portuguese Foundation for Science and Technology (FCT)
DS Docta Complutense
RD 29 abr 2024