TY  - JOUR
AU  - Peres, M.
AU  - Nogales Díaz, Emilio
AU  - Méndez Martín, María Bianchi
AU  - Lorenz, K.
AU  - Correira, M. R.
AU  - Monteiro, T.
AU  - Sedrine, N. Ben
PY  - 2019
DO  - 10.1149/2.0191907jss
SN  - 2162-8769
UR  - https://hdl.handle.net/20.500.14352/13255
T2  - ECS Journal of solid state science and technology
AB  - In this work, we have established the effects of Eu implantation and annealing on beta-Ga_2O_3 thin films grown by metal organic vapor phase epitaxy (MOVPE) on sapphire substrate. The study is based on the combined information from structural and...
LA  - eng
M2  - Q3097
PB  - Electrochemical Society
KW  - Structural-properties
KW  - Electrical-properties
KW  - Annealing analysis
KW  - Optical-properties
KW  - Gallium oxide
KW  - Growth
KW  - Luminescence
KW  - Ga_2o_3
KW  - Layers
KW  - Crystals
TI  - Eu activation in beta-Ga_2O_3 MOVPE thin films by ion implantation
TY  - journal article
VL  - 8
ER  -