TY - JOUR AU - Peres, M. AU - Nogales Díaz, Emilio AU - Méndez Martín, María Bianchi AU - Lorenz, K. AU - Correira, M. R. AU - Monteiro, T. AU - Sedrine, N. Ben PY - 2019 DO - 10.1149/2.0191907jss SN - 2162-8769 UR - https://hdl.handle.net/20.500.14352/13255 T2 - ECS Journal of solid state science and technology AB - In this work, we have established the effects of Eu implantation and annealing on beta-Ga_2O_3 thin films grown by metal organic vapor phase epitaxy (MOVPE) on sapphire substrate. The study is based on the combined information from structural and... LA - eng M2 - Q3097 PB - Electrochemical Society KW - Structural-properties KW - Electrical-properties KW - Annealing analysis KW - Optical-properties KW - Gallium oxide KW - Growth KW - Luminescence KW - Ga_2o_3 KW - Layers KW - Crystals TI - Eu activation in beta-Ga_2O_3 MOVPE thin films by ion implantation TY - journal article VL - 8 ER -