%0 Journal Article
%A Dutta, P. S.
%A Méndez Martín, María Bianchi
%A Piqueras De Noriega, Francisco Javier
%A Dieguez, E.
%A Bhat, H. L.
%T Nature of compensating luminescence centers in Te-diffused and -doped GaSb
%D 1996
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/58962
%X Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundamental differences in the radiative levels are observed between the diffused and the as-grown doped samples. Evidence for self-compensating acceptor complexes are seen in diffused samples. With short and moderate diffusion times, a compensating acceptor complex VGaGaSbTeSb is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect Ga-Sb or related complex. The reasons for the formation of various acceptor centers have been discussed.
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