RT Journal Article
T1 Nature of compensating luminescence centers in Te-diffused and -doped GaSb
A1 Dutta, P. S.
A1 Méndez Martín, María Bianchi
A1 Piqueras De Noriega, Francisco Javier
A1 Dieguez, E.
A1 Bhat, H. L.
AB Diffusion of tellurium In undoped p-GaSb has been carried out. Using the cathodoluminescence and photoluminescence techniques, the luminescence centers in Te-diffused samples have been identified and compared with the Te-doped bulk GaSb. Fundamental differences in the radiative levels are observed between the diffused and the as-grown doped samples. Evidence for self-compensating acceptor complexes are seen in diffused samples. With short and moderate diffusion times, a compensating acceptor complex VGaGaSbTeSb is observed. For long diffusion times, the dominant acceptor center has been attributed to the antisite defect Ga-Sb or related complex. The reasons for the formation of various acceptor centers have been discussed.
PB Amer Inst Physics
SN 0021-8979
YR 1996
FD 1996-07-15
LK https://hdl.handle.net/20.500.14352/58962
UL https://hdl.handle.net/20.500.14352/58962
LA eng
NO © 1996 American Institute of Physics.P.S.D. thanks CSIR (India) for the award of the Senior Research Fellowship. This work was partially supported by the Instituto Nicolas Cabrera, UAM, Madrid, Spain, through a visiting scientist fellowship and by the DGICYT (Project No. PB93-1256), CICYT (IN 93-0012), and ESP-95-0148.
NO Instituto Nicolas Cabrera
NO DGICYT
NO CICYT
DS Docta Complutense
RD 10 abr 2025