%0 Journal Article
%A González Díaz, Germán
%A Artús, L.
%A Blanco, N.
%A Cuscó, R.
%A Ibáñez, J.
%A Long, A.R.
%A Rahman, M.
%T Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
%D 2000
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/59343
%X We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.
%~