RT Journal Article
T1 Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
A1 González Díaz, Germán
A1 Artús, L.
A1 Blanco, N.
A1 Cuscó, R.
A1 Ibáñez, J.
A1 Long, A.R.
A1 Rahman, M.
AB We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of the Shubnikov-de Haas oscillations. The experiments were carried out on n-InP layers, and conduction band nonparabolicity was included both in the Lindhard-Mermin model used to fit the Raman spectra and in the Shubnikov-de Haas analysis. We find a very good agreement between Raman and magnetotransport results, which confirms the reliability of the charge-density determination from Raman-scattering measurements when the line-shape analysis is carried out using the Lindhard-Mermin model.
PB American Institute of Physics
SN 0021-8979
YR 2000
FD 2000-12-01
LK https://hdl.handle.net/20.500.14352/59343
UL https://hdl.handle.net/20.500.14352/59343
LA eng
NO © American Institute of Physics.  The authors wish to acknowledge financial support from the Spanish Ministry of Science and Technology.
NO Spanish Ministry of Science and Technology
DS Docta Complutense
RD 19 abr 2025