TY  - JOUR
AU  - González Díaz, Germán
AU  - Artús, L.
AU  - Blanco, N.
AU  - Cuscó, R.
AU  - Ibáñez, J.
AU  - Long, A.R.
AU  - Rahman, M.
PY  - 2000
DO  - 10.1063/1.1322593
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/59343
T2  - Journal of Applied Physics
AB  - We have verified the accuracy of free-charge determinations from Raman scattering in doped semiconductors by comparing the results obtained from phonon-plasmon coupled-mode line-shape fits with the charge-density values extracted from the analysis of...
LA  - eng
M2  - 6567
PB  - American Institute of Physics
KW  - P-Type GaAs
KW  - Carrier Concentration
KW  - Plasmon Modes
KW  - Phonon Modes
KW  - InP
KW  - Spectra.
TI  - Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
TY  - journal article
VL  - 88
ER  -