RT Journal Article
T1 Characterization of undoped and Te-doped GaSb crystals grown by the vertical feeding method
A1 Vincent, J.
A1 Díaz-Guerra Viejo, Carlos
A1 Piqueras de Noriega, Javier
A1 Amariei, A.
A1 Polychronladis, E.K.
A1 Dieguez, E.
AB Undoped and Te-doped GaSb ingots have been grown by the vertical feeding method. The structural, optical and electrical properties of the grown crystals were respectively investigated by X-ray diffraction, transmission electron microscopy, cathodoluminescence spectroscopy and Hall effect measurements. Undoped samples show good crystalline and electrical properties. Te-doped material presents a clear polycrystalline character and a deviation from axial segregation laws found for crystals grown by classical techniques. The obtained results allow us to draw some conclusions about the solidification mechanism associated to the growth conditions used in our feeding experiments.
PB Elsevier Science B.V.
SN 0022-0248
YR 2006
FD 2006-03-15
LK https://hdl.handle.net/20.500.14352/51164
UL https://hdl.handle.net/20.500.14352/51164
LA eng
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NO © 2005 Elsevier B.V.This work has been carried out in the frame of the Fifth Framework European Programme for research, HPRNCT 2001-00199 project. Support from MCYT through project MAT2003-00455 is also acknowledged.
NO Fifth Framework European Programme for research
NO MCYT
DS Docta Complutense
RD 25 ago 2024