RT Journal Article
T1 Effect of external fields in high Chern number quantum anomalous Hall insulators
A1 Baba, Yuriko Caterina
A1 Amado, Mario
A1 Díez, Enrique
A1 Domínguez-Adame Acosta, Francisco
A1 Molina, Rafael A.
AB A quantum anomalous Hall state with a high Chern number has so far been realized in multilayer structures consisting of alternating magnetic and undoped topological insulator (TI) layers. However, in previous proposals, the Chern number can only be tuned by varying the doping concentration or the width of the magnetic TI layers. This drawback largely restricts the applications of dissipationless chiral edge currents in electronics since the number of conducting channels remains fixed. In this paper, we propose a way of varying the Chern number at will in these multilayered structures by means of an external electric field applied along the stacking direction. In the presence of an electric field in the stacking direction, the inverted bands of the unbiased structure coalesce and hybridize, generating new inverted bands and collapsing the previously inverted ones. In this way, the number of Chern states can be tuned externally in the sample, without the need for modifying the number and width of the layers or the doping level. We showed that this effect can be uncovered by the variation of the transverse conductance as a function of the electric field at constant injection energy at the Fermi level.
PB American Physical Society
SN 2469-9950
YR 2022
FD 2022-12-19
LK https://hdl.handle.net/20.500.14352/72957
UL https://hdl.handle.net/20.500.14352/72957
LA eng
NO ©2022 American Physical SocietyThis paper was supported by the Spanish Ministry of Science and Innovation under Grants No. PID2019- 106820RB-C21/22 and No. PGC2018- 094180-B-I00 funded by MCIN/AEI/10.13039/501100011033 and FEDER “A way of making Europe.”
NO Ministerio de Ciencia e Innovación (MICINN) / FEDER
NO Ministerio de Ciencia e Innovación (MICINN)
DS Docta Complutense
RD 27 abr 2024