RT Journal Article
T1 Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
AB The influence of the semiconductor doping type over the electrical properties of Al/SiNx :H/In0.53Ga0.47As metal-insulator-semiconductor (MIS) devices has been studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The C-V data show that the SiNx:H/p-In0.53Ga0.47As interface is more defective than the SiNx,:H/n-In0.53Ga0.47As one. In both n- and p-type MIS structures, the interface trap density (D-it), the electrical breakdown field (E-B) and the resistivity (rho) are highly dependent on the insulator composition. On the other hand, rapid thermal annealing treatments at temperatures up to 600 degrees C induce a gradual improvement of both interface and SINx:H bulk quality on n-type MIS devices, whereas a continuous degradation of the SiNx:H/p-In0.53Ga0.47As interface properties is observed. Zinc out-diffusion from p-In0.53Ga0.47As towards the insulator-semiconductor interface could explain the poorest electrical characteristics of the MIS structures based on a p-type semiconductor.
PB Iop Publishing Ltd
SN 0268-1242
YR 2000
FD 2000-08
LK https://hdl.handle.net/20.500.14352/59223
UL https://hdl.handle.net/20.500.14352/59223
LA eng
NO © IOP Publishing Ltd. The authors would like to thank CAI de Implantación Iónica from the Complutense University in Madrid for technical assistance with the ECR-CVD system. This research was partially supported by the Spanish Government under Grant No TIC 98/0740.
NO Spanish Government
DS Docta Complutense
RD 10 abr 2025