TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2000
DO  - 10.1088/0268-1242/15/8/307
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/59223
T2  - Semiconductor Science and Technology
AB  - The influence of the semiconductor doping type over the electrical properties of Al/SiNx :H/In0.53Ga0.47As metal-insulator-semiconductor (MIS) devices has been studied using capacitance-voltage (C-V) and current-voltage (I-V) measurements. The C-V...
LA  - eng
M2  - 823
PB  - Iop Publishing Ltd
KW  - Chemical-Vapor-Deposition
KW  - Insulator-Semiconductor Structures
KW  - Gate Quality
KW  - Films
KW  - Transistors
KW  - Dielectrics
KW  - Diffusion
KW  - Stability
KW  - Remote
KW  - PECVD.
TI  - Comparison between n-type and p-type Al/SiNx : H/In-0.53 Ga0.47As devices deposited by electron cyclotron resonance technique
TY  - journal article
VL  - 15
ER  -