TY  - JOUR
AU  - Gonzalo, Alicia
AU  - Nogales Díaz, Emilio
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
PY  - 2014
DO  - 10.1002/pssa.201300310
SN  - 1862-6300
UR  - https://hdl.handle.net/20.500.14352/33525
T2  - Physica Status Solidi A-Applications and Materials Science
AB  - Mn doped –Ga_2O_3 nanowires have been obtained by a thermal evaporation method on a gallium oxide substrate. The growth temperature has been varied in the range 1300-1500 ºC. The morphology of the resulting structures has been found to depend on this...
M2  - 494
PB  - Wiley-V C H Verlag Gmbh
KW  - Gallium Oxide
KW  - Photoluminescence
KW  - ßGa_2O_3
TI  - Influence of growth temperature on the morphology and luminescence of Ga_2O_3:Mn nanowires
TY  - journal article
VL  - 211
ER  -