TY  - JOUR
AU  - Cheze, C.
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
AU  - Corregidor, V.
PY  - 2006
SN  - 1454-4164
UR  - https://hdl.handle.net/20.500.14352/50946
T2  - Journal of Optoelectronics and advanced materials
AB  - Quaternary Ga_(1-x)In_xAs_ySb_(1-y) layers lattice matched to a GaSb substrate are of interest for applications in the infrared range. In this work, the luminescence of Ga_(1-x)In_xAs_ySb_(1-y) layers grown on GaSb by metal organic vapor phase epitaxy...
LA  - eng
M2  - 304
PB  - natl Inst Optoelectronics
KW  - Gasb
KW  - Growth
KW  - Gainassb/Gasb
KW  - Alloys
TI  - Cathodoluminescence of Ga_(1-x)In_xAs_ySb_(1-y) epitaxial layers
TY  - journal article
VL  - 8
ER  -