RT Book, Section
T1 Radiation effects on XFET voltage references
A1 Franco Peláez, Francisco Javier
A1 Zong, Yi
A1 Agapito Serrano, Juan Andrés
A1 Hernandez Cachero, Antonio
AB XFET references make up a new kind of voltage references different from the popular band-gap or buried Zener devices. These references are built by means of a reference cell consisting of a couple of p-channel junction field effect transistors with different pinch-off voltage values and an operational amplifier for the purpose of improving the output characteristics of the whole device. An irradiation in a mixed gamma and neutron environment was performed at the Portuguese Research Reactor for a complete characterization of the devices. Some of the parameters were measured during the irradiation while the rest of them were obtained once the samples were removed from the neutron facility. Experimental results show that some references belonging to this class are interesting candidates for a design of radiation-tolerant electronic systems based on COTS devices.
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 0-7803-9367-8
YR 2005
FD 2005-07-11
LK https://hdl.handle.net/20.500.14352/53390
UL https://hdl.handle.net/20.500.14352/53390
LA eng
NO © IEEEIEEE Radiation Effects Data Workshop (2005. Seattle, WA).This work was supported by the collaboration agreementK476/LHC between CERN and UCM, by the Spanish ResearchAgency CICYT (FPA2002-00912) and partially supported by ITN.
NO Ministerio de Educación y Ciencia
NO CERN
NO Universidad Complutense de Madrid
NO CICYT
NO ITN (Portugal)
DS Docta Complutense
RD 9 abr 2025