RT Journal Article
T1 Impact of Dynamic Voltage Scaling on SEU Sensitivity of COTS Bulk SRAMs and A-LPSRAMs Against Proton Radiation
A1 Rezaei, Mohammadreza
A1 Hubert, Guillaume
A1 Martín Holgado, Pedro
AB In aerospace industry, Commercial-Off-The-Shelf (COTS) Static Random Access Memories (SRAMs) are a cost-effective solution for obtaining high performance at the system level, which is difficult to obtain using space qualified components. Additionally, the usage of Dynamic Voltage Scaling (DVS) is commonly used in space environments, where low power consumption is a critical issue. This paper presents an analysis of the sensitivity against Single Event Upsets (SEUs) of various COTS bulk SRAMs and Advanced Low-Power SRAMs against proton radiation when using DVS to save power. Experimental results will show a clear evidence that the sensitivity to SEUs increases when the power is lowered. 2 sets of successive technologies (130-nm, 90-nm and 65-nm bulk SRAMs; and 150-nm and 110-nm A-LPSRAMs) are evaluated against 15~MeV protons and compared with results of 14~MeV neutrons presented in a previous work. Experimental data are finally compared with analytical simulations obtained by using the MUSCA-SEP3 Monte-Carlo tool to predict the effect of DVS on the SEE sensitivity on more modern technologies in the ITRS/IRDS roadmap.
PB IEEE-Inst Electrical Electronics Engineers Inc
SN 0018-9499
YR 2022
FD 2022-01-22
LK https://hdl.handle.net/20.500.14352/71329
UL https://hdl.handle.net/20.500.14352/71329
LA eng
NO Ministerio de Economía y Competitividad
DS Docta Complutense
RD 4 may 2024