TY  - CHAP
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2002
DO  - 10.1557/PROC-699-R4.4
SN  - 1-55899-635-4
UR  - https://hdl.handle.net/20.500.14352/60847
AB  - As it has been shown elsewhere, conductance transient measurements provide quantitative information about the disordered induced gap states (DIGS) in metal-insulator-semiconductor (MIS) structures. In this work we report for the first time the DIGS...
M2  - 231
PB  - Materials Research Society
KW  - Electrical Characterization
KW  - C-V
KW  - Al/SiNx
KW  - H/InP
KW  - DLTS
TI  - Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures
TY  - book part
VL  - III
ER  -