RT Journal Article
T1 Cathodoluminescence study of ytterbium doped GaSb
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, Bianchi
A1 Ruiz, C.
A1 Bermudez, V.
A1 Piqueras de Noriega, Javier
A1 Dieguez, E.
AB b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the point defects has been found to depend on the position along the growth axis. Doping with Yb has been found to reduce the luminescence intensity of GaSb and no infrared emission related to intra-ionic transitions of the Yb_(3+) ions has been detected
PB Elsevier Science Sa
SN 0921-5107
YR 2005
FD 2005-07-25
LK https://hdl.handle.net/20.500.14352/50949
UL https://hdl.handle.net/20.500.14352/50949
LA eng
NO [1] P.S. Dutta, H.L. Bhat, V. Kumar, J. Appl. Phys. 81 (1997) 5821–5870.[2] P. Hidalgo, B. Méndez, J. Piqueras, J Plaza, E Diéguez, Semicond. Sci. Technol. 13 (1998) 1431–1433.[3] P. Hidalgo, B. Méndez, J. Piqueras, J. Plaza, E. Di´eguez, J. Appl. Phys. 86 (1999) 1449–1451.[4] J.L. Plaza, P. Hidalgo, B. Méndez, J. Piqueras, J.L. Castaño, E. Diéguez, J. Crystal Growth 198/199 (1999) 379–383.[5] J.L. Plaza, P. Hidalgo, B. Méndez, J. Piqueras, E. Diéguez, Mater. Sci. Eng. B 71 (2000) 282–287.[6] J.L. Plaza, P. Hidalgo, B. Méndez, J. Piqueras, J.L. Castaño, E. Diéguez, Mater. Sci. Eng. B 81 (2001) 157–160.[7] P. Hidalgo, J.L. Plaza, B. Méndez, E. Di´eguez, J. Piqueras, J. Phys.: Condens. Matter 14 (2002) 13211–13215.[8] J.L. Plaza, P. Hidalgo, B. Méndez, J. Piqueras, E. Diéguez, J. Crystal Growth 241 (2002) 283–288.[9] H.J. Lozykowski, A.K. Alshawa, G. Ponrenke, I. Brown, MRS Proc. 301 (1993) 263.[10] D.J. Heijmink-Liesert, M. Godlewski, A. Stapor, T. Gregorkiewic, C.A.J. Ammerlaan, J. Weber, M. Moser, F. Scholz, Appl. Phys. Lett. 58 (1991) 2237–2239.[11] D. Seghier, T. Benyattou, A. Kalboussi, S. Moneger, G. Marrakchi, G. Guillot, B. Lambert, A. Guivarc’h, J. Appl. Phys. 75 (1994) 4171–4175.[12] B. Méndez, P.S. Dutta, J. Piqueras, E. Diéguez, Appl. Phys. Lett. 67 (1995) 2648–2650.[13] B. Méndez, J. Piqueras, P.S. Dutta, E. Di´eguez, Mater. Sci. Eng. B 42 (1996) 38–42.[14] D. Weler, H. Mehrer, Phil. Mag. 49 (1984) 309.[15] W.J. Jiang, Y.M. Sun, M.C. Wu, J. Appl. Phys. 77 (1995) 1725–1728.[16] P. Hidalgo, B. Méndez, P.S. Dutta, J. Piqueras, E. Diéguez,  Phys. Rev. B 57 (1998) 6479–6484.[17] A. Taguchi, H. Nakagomeand, K. Takahei, J. Appl. Phys. 68 (1990) 3390–3393.[18] M.A.J. Klik, T. Gregorkiewicz, I.V. Bradley, J-P.R. Wells, Phys. Rev. Lett. 89 (2002) 227401.
NO © 2005 Elsevier B.V. All rights reserved.This work was supported by the EU (HPRN-CT-2001-00199) and MECD (MAT2003-00455).
NO EU
NO MECD
DS Docta Complutense
RD 3 may 2024