TY  - JOUR
AU  - Hidalgo Alcalde, Pedro
AU  - Méndez Martín, María Bianchi
AU  - Ruiz, C.
AU  - Bermudez, V.
AU  - Piqueras De Noriega, Francisco Javier
AU  - Dieguez, E.
PY  - 2005
DO  - 10.1016/j.mseb.2005.03.010
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/50949
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - b-doped GaSb ingots have been grown by the Bridgman method. The defect structure and compositional homogeneity of the crystals have been investigated by cathodoluminescence and X-ray microanalysis in the scanning electron microscope. The nature of the...
LA  - eng
M2  - 108
PB  - Elsevier Science Sa
KW  - Electrical-Properties
KW  - Gallium Antimonide
KW  - Crystals
KW  - Epitaxy
TI  - Cathodoluminescence study of ytterbium doped GaSb
TY  - journal article
VL  - 121
ER  -