RT Journal Article
T1 Study of the defect structure, compositional and electrical properties of Er_2O_3-doped n-type GaSb : Te crystals grown by the vertical Bridgman technique
A1 Plaza, J. L.
A1 Hidalgo Alcalde, Pedro
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
A1 Dieguez, E.
AB The defect structure of Te-doped GaSb samples co-doped with Er_2O_3 and grown by the vertical Bridgman technique has been analysed. This study was carried out for different Er and Te concentrations. The defect structure of the samples has been analysed by means of cathodoluminescence (CL), scanning electron microscopy (SEM) and wavelength dispersive X-ray microanalysis (WDX). The effect of the defect structure and sample composition on the electrical properties of the material has been established taking into account the results obtained by means of the van der Pauw technique.
PB Elsevier Science Sa
SN 0921-5107
YR 2002
FD 2002-04-30
LK https://hdl.handle.net/20.500.14352/58931
UL https://hdl.handle.net/20.500.14352/58931
LA eng
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NO © 2002 Elsevier Science B.V. International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (9. 2001. Ramini, Italia)
DS Docta Complutense
RD 15 may 2024