TY  - JOUR
AU  - Plaza, J. L.
AU  - Hidalgo Alcalde, Pedro
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
AU  - Dieguez, E.
PY  - 2002
DO  - 10.1016/S0921-5107(01)01065-0
SN  - 0921-5107
UR  - https://hdl.handle.net/20.500.14352/58931
T2  - Materials Science and Engineering B-Solid State Materials for Advanced Technology
AB  - The defect structure of Te-doped GaSb samples co-doped with Er_2O_3 and grown by the vertical Bridgman technique has been analysed. This study was carried out for different Er and Te concentrations. The defect structure of the samples has been...
LA  - eng
M2  - 529
PB  - Elsevier Science Sa
TI  - Study of the defect structure, compositional and electrical properties of Er_2O_3-doped n-type GaSb : Te crystals grown by the vertical Bridgman technique
TY  - journal article
VL  - 91-92
ER  -