%0 Journal Article
%A Martil De La Plaza, Ignacio
%A González Díaz, Germán
%A Olea Ariza, Javier
%T Intermediate band mobility in heavily titanium-doped silicon layers
%D 2009
%@ 0927-0248
%U https://hdl.handle.net/20.500.14352/44246
%X The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of ail intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed.
%~