RT Journal Article
T1 Intermediate band mobility in heavily titanium-doped silicon layers
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Olea Ariza, Javier
AB The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behavior is observed that is well explained on the basis of the appearance of ail intermediate band (IB) region able to form a blocking junction with the substrate and of the appearance of an IB conduction. Explanations based on ordinary device physics fail to justify all the unconventional behavior of the characteristics observed.
PB Elsevier Science BV
SN 0927-0248
YR 2009
FD 2009-09
LK https://hdl.handle.net/20.500.14352/44246
UL https://hdl.handle.net/20.500.14352/44246
LA eng
NO © 2009 Elsevier B.V. All rights reserved. This work has been supported by the project IBPOWER, funded by  the European Commission under Contract no .211640, by the Regional Government of Madrid with in the project NUMANCIA (S-0505/ENE/000310) and by the Spanish National Research Program with in the project GENESIS-FV (CSD2006-0004).
NO European Commission
NO Regional Government of Madrid
NO Spanish National Research Program
DS Docta Complutense
RD 6 abr 2025