TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Olea Ariza, Javier
PY  - 2009
DO  - 10.1016/j.solmat.2009.05.014
SN  - 0927-0248
UR  - https://hdl.handle.net/20.500.14352/44246
T2  - Solar Energy Materials and Solar Cells
AB  - The sheet resistance and the Hall mobility of high-purity Si wafers, in whose surface Ti atoms are implanted and laser annealed reaching concentrations above 10(21) cm(-3), are measured in the 90-370 K range. Below 240 K, an unconventional behavior is...
LA  - eng
M2  - 1668
PB  - Elsevier Science BV
KW  - Solar-Cells
KW  - Energy-Conversion
KW  - Efficiency
KW  - Recombination
KW  - Ionization
KW  - Iron.
TI  - Intermediate band mobility in heavily titanium-doped silicon layers
TY  - journal article
VL  - 93
ER  -