RT Journal Article
T1 Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
A1 Gao, Z.
A1 Romero, M. F.
A1 Redondo Cubero, A.
A1 Pampillón, M. A.
A1 San Andrés Serrano, Enrique
A1 Calle, F.
AB AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd2O3 as gate dielectric were irradiated with 2-MeV protons up to fluence of 1 x 10(15) cm(-2). Results showed that proton irradiation causes a strong degradation in the Schottky gate devices, featured by more than three orders of magnitude increase in reverse leakage current, a 30% decrease in maximum drain current, and the same percentage of increase in ON-resistance, respectively. Scanning transmission electron microscopy showed that radiation induced a diffusion of Ni into Au in the gate and void formation, degrading the transistors' characteristics. The Gd2O3 gate dielectric layer prevented this diffusion and void formation. MOS-HEMTs with Gd2O3 gate dielectric show 50% less decrease of performance under proton irradiation than Schottky gate HEMTs (conventional HEMTs). The trapping effects of Gd2O3 gate layer before and after irradiation are also discussed.
PB IEEE- Inst. Electrical Electronics Engineers Inc
SN 0741-3106
YR 2017
FD 2017-05
LK https://hdl.handle.net/20.500.14352/19395
UL https://hdl.handle.net/20.500.14352/19395
LA eng
NO This work was supported in part by the Ministerio de Ciencia e Innovación and Ministerio de Economía y Competitividad of Spain under Project RUE (CSD2009-00046) and Project CAVE (TEC2012-38247), in part by the Juan de la Cierva Program (Spain) under Contract JCI-2012-14509, and in part by the Juan de la Cierva-Incorporación Program (Spain) under Contract IJCI-2014-19473.
NO Ministerio de Ciencia e Innovación
NO Ministerio de Economía y Competitividad of Spain
NO Juan de la Cierva Program (Spain)
NO Juan de la Cierva-Incorporación Program (Spain)
DS Docta Complutense
RD 6 abr 2025