TY  - JOUR
AU  - Gao, Z.
AU  - Romero, M. F.
AU  - Redondo Cubero, A.
AU  - Pampillón, M. A.
AU  - San Andrés Serrano, Enrique
AU  - Calle, F.
PY  - 2017
DO  - 10.1109/LED.2017.2682795
SN  - 0741-3106
UR  - https://hdl.handle.net/20.500.14352/19395
T2  - IEEE Electron Device Letters
AB  - AlGaN/GaN high electron mobility transistors (HEMTs) and MOS-HEMTs using Gd2O3 as gate dielectric were irradiated with 2-MeV protons up to fluence of 1 x 10(15) cm(-2). Results showed that proton irradiation causes a strong degradation in the Schottky...
LA  - eng
M2  - 611
PB  - IEEE- Inst. Electrical Electronics Engineers Inc
KW  - Electron-mobility transistors
KW  - Temperature
KW  - Performance
TI  - Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs
TY  - journal article
VL  - 38
ER  -