RT Book, Section T1 Evolution of lowest supply voltage and hysteresis phenomena in irradiated analog CMOS switches A1 Franco Peláez, Francisco Javier A1 Zong, Yi A1 Agapito Serrano, Juan Andrés A1 Casas-Cubillos, Juan A1 Rodríguez-Ruiz, Miguel Ángel AB Radiation tests on CMOS analog switches were carried out in order to select the most tolerant device for future use in the cryogenic system of the CERN large hadron collider. After irradiation, the devices showed some interesting changes related to the power supplies: an increase in the lowest supply voltage capable of biasing correctly the devices; some devices cannot work with TTL logic levels. In addition, hysteresis phenomena appear. PB IEEE-Inst Electrical Electronics Engineers Inc SN 0-7803-8697-3 YR 2004 FD 2004-07-22 LK https://hdl.handle.net/20.500.14352/53407 UL https://hdl.handle.net/20.500.14352/53407 LA eng NO [1] P. Horowitz, The Art of Electronics, 2nd ed. Cambridge University Press, 1990.[2] A. C. Fernandes, I. C. Goncalves, J. G. Marques, J. Santos, A. J. G. Ramalho, and M. Osvay, “Mixed-field dosimetry of a fast neutron beam at the Portuguese Research Reactor for the irradiation of electronic circuits – measurements and calculations,” in Proc. 11th Intl. Symp. on Reactor Dosimetry, Aug. 2002, pp. 19–23.[3] “ATLAS Standard Radiation Test Methods, Appendix 2,” [online] Available: http://atlas.web.cern.ch/Atlas/GROUPS/FRONTEND/radhard.htm.[4] G. C. Messenger, “A summary review of displacement damage from high energy radiation in silicon semiconductors and semiconductor devices,” IEEE Transactions on Nuclear Science, vol. 39, no. 3, pp. 468–473, Jun 1992.[5] J. R. Srour and J. M. McGarrity, “Radiation Effects on Microelectronics in Space,” Proceedings of the IEEE, vol. 76, no. 11, pp. 1443–1469, November 1988.[6] J. A. Agapito et al., “Radiation test on commercial instrumentation amplifiers, analog switches and DACs,” in Proc. 7th Workshop for LHC Experiments, 2001, pp. 113–118.[7] Y. Zong, F. J. Franco, and J. A. Agapito, “Using Optimization Techniques to Characterize Irradiated CMOS Switches,” to be presented at the RADECS2004 Workshop, Sept. 22-24 2004.[8] T. A. DeMassa and Z. Ciccone, Digital Integrated Circuits. John Wiley and Sons, 1996, ch. 26.[9] D. Larsen, P. Welling, and W. Tsacoyeanes, “The Effects of Ionizing Radiation on the Honeywell HTMOS High-Temperature Linear CMOS Technology,” in IEEE Radiation Effects Data Workshop, Jul. 1996, pp. 55–61. NO © IEEEIEEE Radiation Effects Data Workshop (2004, Atlanta).This work was supported by the cooperation agreement K476/LHC between CERN and UCM, by the Spanish Research Agency CICYT (FPA2002-00912) and partially supported by ITN. NO Ministerio de Educación y Ciencia NO CERN NO ITN (Portugal) NO Universidad Complutense de Madrid NO CICYT DS Docta Complutense RD 6 may 2024