%0 Journal Article
%A Prieto, Pilar
%A Marco, F.
%A Prieto, José E.
%A Ruiz Gómez, Sandra
%A Pérez García, Lucas
%A Perez del Real, Rafael
%A Velazquez, Manuel
%A De laFiguera, Juan
%T Epitaxial integration of CoFe₂O₄ thin films on Si (001) surfaces using TiN buffer layers
%D 2018
%@ 0169-4332
%U https://hdl.handle.net/20.500.14352/11953
%X Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe₂, or ceramic, CoFe₂2O₄, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe₂O₄ [100]/TiN [100]/Si [100]. Mossbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in- plane anisotropy depends on the lattice mismatch between CoFe₂O₂ and TiN, which is larger for CoFe₂O₄ thin films grown on the reactive sputtering process with ceramic targets.
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