RT Journal Article
T1 Epitaxial integration of CoFe₂O₄ thin films on Si (001) surfaces using TiN buffer layers
A1 Prieto, Pilar
A1 Marco, F.
A1 Prieto, José E.
A1 Ruiz Gómez, Sandra
A1 Pérez García, Lucas
A1 Perez del Real, Rafael
A1 Velazquez, Manuel
A1 De laFiguera, Juan
AB Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe₂, or ceramic, CoFe₂2O₄, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe₂O₄ [100]/TiN [100]/Si [100]. Mossbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in- plane anisotropy depends on the lattice mismatch between CoFe₂O₂ and TiN, which is larger for CoFe₂O₄ thin films grown on the reactive sputtering process with ceramic targets.
PB Elsevier Science B. V.
SN 978-1-62841-817-0
SN 0169-4332
YR 2018
FD 2018-04-01
LK https://hdl.handle.net/20.500.14352/11953
UL https://hdl.handle.net/20.500.14352/11953
LA eng
NO ©2017 Elsevier B.V. All rights reserved.This work was supported by the Spanish Ministry of Economy under the project number MAT2015-64110-CO2.
NO Ministerio de Economía y Competitividad (MINECO)
DS Docta Complutense
RD 8 abr 2025