%0 Book Section
%T Spatial distribution of vacancy defects in GaAs : Te wafers studied by positron annihilation
publisher Trans Tech Publications Ltd
%D 1997
%U 0-87849-779-X
%@ https://hdl.handle.net/20.500.14352/60855
%X The radial vacancy distribution along a LEC-GaAs:Te wafer with an average free carrier concentration n = 1.5 x 10(18) cm(-3) was studied by means of positron lifetime spectroscopy. An M-shaped radial distribution of vacancy-like defects, most probably Te(As)V(Ga)(-), was observed.
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