RT Book, Section
T1 Spatial distribution of vacancy defects in GaAs : Te wafers studied by positron annihilation
A1 Cavallini, A.
A1 Dupasquier, A.
A1 Ferro, G.
A1 Piqueras De Noriega, Francisco Javier
A1 Valli, M.
AB The radial vacancy distribution along a LEC-GaAs:Te wafer with an average free carrier concentration n = 1.5 x 10(18) cm(-3) was studied by means of positron lifetime spectroscopy. An M-shaped radial distribution of vacancy-like defects, most probably Te(As)V(Ga)(-), was observed.
PB Trans Tech Publications Ltd
SN 0-87849-779-X
YR 1997
FD 1997
LK https://hdl.handle.net/20.500.14352/60855
UL https://hdl.handle.net/20.500.14352/60855
NO © Trans Tech Publications Ltd.International Conference on Positron Annihilation (ICPA-11) (11. 1997. Kansas City, Missouri, USA).
DS Docta Complutense
RD 26 abr 2025