RT Journal Article
T1 Effect of different buffer layers on the quality of InGaN layers grown on Si
A1 Varela del Arco, M.
A1 Gómez, Víctor J.
A1 Grandal, Javier
A1 Núñez Cascarejo, Arántzazu
A1 Naranjo, Fernando B.
A1 Sánchez García, M. A.
A1 Calleja, E.
AB This work studies the effect of four different types of buffer layers on the structural and optical properties of InGaN layers grown on Si(111) substrates and their correlation with electrical characteristics. The vertical electrical conduction of n-InGaN/buffer-layer/p-Si heterostructures, with In composition near 46%, which theoretically produces an alignment of the bands, is analyzed. Droplet elimination by radical-beam irradiation was successfully applied to grow high quality InGaN films on Si substrates for the first time. Among several buffer choices, an AlN buffer layer with a thickness above 24 nm improves the structural and optical quality of the InGaN epilayer while keeping a top to bottom ohmic behavior. These results will allow fabricating double-junction InGaN/Si solar cells without the need of tunnel junctions between the two sub-cells, therefore simplifying the device design.
PB American Institute of Physics
SN 2158-3226
YR 2018
FD 2018-10
LK https://hdl.handle.net/20.500.14352/12986
UL https://hdl.handle.net/20.500.14352/12986
LA eng
NO © Author(s) 2018The authors acknowledge Ms. M.C. Sabido for her work in processing the electrical contacts, and Dr. P. Aseev for fruitful discussions. The work was partly supported by the Spanish Ministry of Science and Innovation, project MAT2011-26703 and ETSIT UPM. Research at UCM sponsored by MINECO/Feder grant MAT2015-066888-C3-3-R and European Research Council PoC2015 grant "MAGTOOLS", GA#713251.
NO Unión Europea. H2020
NO Ministerio de Ciencia e Innovación (MICINN)
NO ETSIT UPM
NO Ministerio de Economía y Competitividad (MINECO)/FEDER
DS Docta Complutense
RD 8 may 2024