RT Journal Article
T1 Structural, electrical, and optical properties of CuGaSe2 rf sputtered thin films
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Sánchez Quesada, Francisco
A1 Santamaría Sánchez-Barriga, Jacobo
AB Thin films of CuGaSe2 have been produced by rf sputtering. Compositional, structural, electrical, and optical properties are strongly influenced by growthtemperature. At substrate temperatures lower than 300 °C amorphous or poorly crystalline Se‐excess films are obtained, showing high resistivity (≊103 Ω cm) and optical transitions at 1.62, 1.80, and 2.4 eV (values lower than the single‐crystal counterparts). At the higher growthtemperatures,polycrystalline films are obtained (average grain size 0.7 μm) with lower values of resistivity (1 Ω cm), and optical transitions at 1.68, 1.90, and 2.55 eV (very close to the single‐crystal values). A hopping conduction mechanism has been detected at the lower measuringtemperature (T<150 K), and a grain boundary limited conduction process at the higher measurementstemperature (T>150 K). Structural and compositional characteristics are used to explain the behavior observed in the electrical and optical properties.
PB American Institute of Physics
SN 0021-8979
YR 1990
FD 1990-06-01
LK https://hdl.handle.net/20.500.14352/59314
UL https://hdl.handle.net/20.500.14352/59314
LA eng
NO © American Institute of Physcis. The authors would like to express their acknowledgment to J. Carabe (Instituto de Energías Renovables, C.I.E.M.A.T.) for optical measurements facilities and J.M. Gómez de Salazar (Departamento de Metalurgia, U.C.M.) for S.E.M. observations and EDAX analysis. This work was partially supported by the U.S.-Spain Joint Committee for Science and Technology under Grant No. CCA-84111046.
NO U.S.-Spain Joint Committee for Science and Technology
DS Docta Complutense
RD 6 abr 2025