RT Journal Article
T1 Nonlinear resonant-tunneling through double-barrier structures
A1 Díez Alcántara, Eduardo
A1 Domínguez-Adame Acosta, Francisco
A1 Sánchez, A.
AB We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with thin barriers simulated by delta-function potentials. This approximation allows for an analytical expression of the transmission probability through the structure. We show that the typical peaks due to resonant tunneling decrease and broaden as nonlinearity increases. The main conclusion is that nonlinear effects degrade the peak-to-valley ratio but improve the maximum operation frequency of the resonant tunnelling devices.
PB Elsevier
SN 0375-9601
YR 1995
FD 1995-03-13
LK https://hdl.handle.net/20.500.14352/59380
UL https://hdl.handle.net/20.500.14352/59380
LA eng
NO © Elsevier.F. D-A. acknowledges support from UCM through project PR161/93-4811. A. S. acknowledges partial support from C.I.C. y T. (Spain) through project PB92-0248 and by the European Union Human Capital and Mobility Programme through contract ERBCHRXCT930413.
NO UCM
NO C.I.C. y T. (Spain)
NO European Union Human Capital and Mobility Programme
DS Docta Complutense
RD 9 abr 2025