%0 Journal Article
%A Méndez Martín, María Bianchi
%A Piqueras De Noriega, Francisco Javier
%T Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers
%D 1991
%@ 0021-8979
%U https://hdl.handle.net/20.500.14352/58998
%X Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.
%~