RT Journal Article
T1 Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers
A1 Méndez Martín, Bianchi
A1 Piqueras de Noriega, Javier
AB Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been found. Profiles of infrared CL intensity across the wafers show an inverted U shape.
PB Amer Inst Physics
SN 0021-8979
YR 1991
FD 1991-03-01
LK https://hdl.handle.net/20.500.14352/58998
UL https://hdl.handle.net/20.500.14352/58998
LA eng
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NO © 1991 American institute of Physics.This work was supported by the Comision Interministerial de Ciencia y Tecnologia (Project PB86-015 1) and by DGlCYT-DAAD. The authors thank Wacker-Chemitronic (Dr. K. Liihnert) for providing the samples
NO Comision Interministerial de Ciencia y Tecnologia
NO DGlCYT-DAAD
DS Docta Complutense
RD 1 may 2024