TY  - JOUR
AU  - Méndez Martín, María Bianchi
AU  - Piqueras De Noriega, Francisco Javier
PY  - 1991
DO  - 10.1063/1.348636
SN  - 0021-8979
UR  - https://hdl.handle.net/20.500.14352/58998
T2  - Journal of Applied Physics
AB  - Cathodoluminescence (CL) scanning electron microscopy has been used to investigate the nature and distribution of defects involved in the infrared emission of GaAs:Te wafers. Spectral and CL-contrast changes as a function of doping level have been...
LA  - eng
M2  - 2776
PB  - Amer Inst Physics
KW  - Spatial-Distribution
TI  - Influence of te concentration on the infrared cathodoluminescence of GaAs:Te wafers
TY  - journal article
VL  - 69
ER  -