TY  - JOUR
AU  - Mártil de la Plaza, Ignacio
AU  - González Díaz, Germán
PY  - 2001
DO  - 10.1143/JJAP.40.4479
SN  - 0021-4922
UR  - https://hdl.handle.net/20.500.14352/59106
T2  - Japanese Journal of Applied Physics, Part. 1: Regular Papers Short Notes & Review Papers
AB  - We have analyzed the influence of the dielectric composition and the post deposition rapid thermal annealing (RTA) treatment on the electrical characteristics of electron-cyclotron-resonance plasma-deposited SiNx:H/n and p-In0.53Ga0.47As interfaces....
LA  - eng
M2  - 4479
PB  - Inst. Pure Applied Physics
KW  - Insulator-Semiconductor Structures
KW  - Annealed Al/SiNx
KW  - Interface States
KW  - H/InP
KW  - Quality
KW  - Devices
KW  - Fabrication.
TI  - Electrical characterization of Al/SiNx : H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques
TY  - journal article
VL  - 40
ER  -