%0 Journal Article
%A Pampillón, María Ángela.
%A Feijoo, Pedro Carlos
%A San Andrés Serrano, Enrique
%A Toledano-Luque, María
%A Prado Millán, Álvaro Del
%A Blázquez, Antonio J.
%A Lucía Mulas, María Luisa
%T Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
%D 2011
%@ 0167-9317
%U https://hdl.handle.net/20.500.14352/99177
%X Amorphous Gd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studied: platinum, aluminum and titanium. For both dielectrics, it was found that Pt did not react with the films, while Al reacted with them forming an aluminate-like interface and, finally, Ti was effective in scavenging the SiO2 interface thickness without severely compromising gate dielectric leakage.
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