RT Journal Article
T1 Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study
A1 Pampillón, María Ángela.
A1 Feijoo, Pedro Carlos
A1 San Andrés Serrano, Enrique
A1 Toledano-Luque, María
A1 Prado Millán, Álvaro Del
A1 Blázquez, Antonio J.
A1 Lucía Mulas, María Luisa
AB Amorphous Gd2O3 and Sc2O3 thin films were deposited on Si by high-pressure sputtering (HPS). In order to reduce the uncontrolled interfacial SiOx growth, firstly a metallic film of Gd or Sc was sputtered in pure Ar plasma. Subsequently, they were in situ plasma oxidized in an Ar/O2 atmosphere. For post-processing interfacial SiOx thickness reduction, three different top metal electrodes were studied: platinum, aluminum and titanium. For both dielectrics, it was found that Pt did not react with the films, while Al reacted with them forming an aluminate-like interface and, finally, Ti was effective in scavenging the SiO2 interface thickness without severely compromising gate dielectric leakage.
PB Elsevier
SN 0167-9317
YR 2011
FD 2011
LK https://hdl.handle.net/20.500.14352/99177
UL https://hdl.handle.net/20.500.14352/99177
LA eng
NO Pampillón, M. A., et al. «Towards Metal Electrode Interface Scavenging of Rare-Earth Scandates: A Sc2O3 and Gd2O3 Study». Microelectronic Engineering, vol. 88, n.o 7, julio de 2011, pp. 1357-60. DOI.org (Crossref), https://doi.org/10.1016/j.mee.2011.03.025.
NO Ministerio de Ciencia e Innovación (España)
DS Docta Complutense
RD 20 ene 2026