RT Journal Article
T1 Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates
A1 Martil De La Plaza, Ignacio
A1 González Díaz, Germán
A1 Prado Millán, Álvaro Del
A1 San Andrés Serrano, Enrique
AB An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiO(x)Ny dielectric films deposited on silicon substrates by electron-cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD) has been carried out. Overall interpretation of deep-level transient spectroscopy (DLTS) and conductance transient (G-t) measurements enables us to conclude that the interface quality of Al/SiOxNy/Si MIS structures is superior to those of Al/SiNx/Si devices. Moreover,. we have proved that thermal treatments applied to Al/SiOxNy/Si capacitors induce defect passivation, possibly related to the presence of hydrogen in the films, and disorder-induced gap-state (DIGS) density maxima can decrease to values even lower than those corresponding to Al/SiNx/SiO2/Si devices.
PB Inst. Pure Applied Physics
SN 0021-4922
YR 2004
FD 2004-01
LK https://hdl.handle.net/20.500.14352/51126
UL https://hdl.handle.net/20.500.14352/51126
LA eng
NO © 2004 The Japan Society of Applied Physics. The authors would like to thank C.A.I. de Implantación Iònica from Complutense University in Madrid for technical assistance with the ECR-PECVD system. This research was partially supported by the Spanish DGESIC under grant nos. TIC 1FD97-2085 and TIC 01/1253.
NO Spanish DGESIC
DS Docta Complutense
RD 7 abr 2025