TY  - JOUR
AU  - Martil De La Plaza, Ignacio
AU  - González Díaz, Germán
AU  - Prado Millán, Álvaro Del
AU  - San Andrés Serrano, Enrique
PY  - 2004
DO  - 10.1143/JJAP.43.66
SN  - 0021-4922
UR  - https://hdl.handle.net/20.500.14352/51126
T2  - Japanese Journal of Applied Physics Part-1: Regular Papers Short Notes & Review Papers
AB  - An interface quality comparative study of metal-insulator-semiconductor (MIS) structures based on SiNx, SiO2/SiNx and SiO(x)Ny dielectric films deposited on silicon substrates by electron-cyclotron resonance plasma-enhanced chemical vapor deposition...
LA  - eng
M2  - 66
PB  - Inst. Pure Applied Physics
KW  - Insulator-Semiconductor Structures
KW  - Induced Gap States
KW  - C-V Curves
KW  - Quality
KW  - Oxide
KW  - Oxynitride
KW  - Devices.
TI  - Conductance transient comparative analysis of electron-cyclotron resonance plasma-enhanced chemical vapor deposited SiNx, SiO2/SiNx, and SiOxNy dielectric films on silicon substrates
TY  - journal article
VL  - 43
ER  -