%0 Journal Article
%A Algaidy, Sari
%A Caudevilla Gutiérrez, David
%A Perez Zenteno, F.
%A García Hernansanz, Rodrigo
%A García Hemme, Eric
%A Olea Ariza, Javier
%A San Andrés Serrano, Enrique
%A Duarte Cano, S.
%A Siegel, J.
%A Gonzalo, J.
%A Pastor Pastor, David
%A Prado Millán, Álvaro del
%T High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs
%D 2023
%@ 1369-8001
%U https://hdl.handle.net/20.500.14352/72593
%X We present a detailed investigation on the formation of supersaturated GaAs using Ti+ implantation followed by nanosecond Pulsed Laser Melting (PLM). We have synthesized high-crystal quality supersaturated GaAs layers with concentrations of Ti above the insulator to metal transition (Mott limit). The Ti-implanted concentration depth profiles after PLM obtained by Time-of-Flight Secondary Ion Mass Spectroscopy (ToF-SIMS) show a redistribution of Ti impurities within the first hundred nanometers and superficial concentration up to 1 × 1021 redistrcm-3. Raman spectroscopy of these Ti supersaturated, and regrown GaAs samples shows a sharp crystalline peak and tensile strain due to the Ti lattice incorporation. Scanning Transmission Electron Microscopy (STEM) and high-resolution Transmission Electron Microscopy (TEM) images show a good GaAs crystallinity after the PLM process. Energy-Dispersive X-ray Spectroscopy (EDS) reveals an enhanced Ti signal inside bubble-like structures and an appearance of interface oxide layer with all processed samples.
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