RT Journal Article
T1 Thermal growth and cathodoluminescence of Bi doped ZnO nanowires and rods
A1 Alemán, B.
A1 Hidalgo Alcalde, Pedro
A1 Fernández Sánchez, Paloma
A1 Piqueras De Noriega, Francisco Javier
AB Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporation-deposition method with precursors containing either ZnO and Bi_2O_3 or ZnS and Bi_2O_3 powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15-0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I-V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.
PB IOP Publishing LTD
SN 0022-3727
YR 2009
FD 2009-11-21
LK https://hdl.handle.net/20.500.14352/44201
UL https://hdl.handle.net/20.500.14352/44201
LA eng
NO © 2009 IOP Publishing Ltd.This work was supported by MEC (Project MAT2006-01259).
NO MEC
DS Docta Complutense
RD 30 dic 2025