RT Journal Article
T1 Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces
A1 Miranda Pantoja, José Miguel
A1 Sebastián Franco, José Luis
AB This work presents a systematic investigation of the influence of reactive ion etching (RIE) on the microwave noise performance of GaAs Schottky diodes. A number of devices has been fabricated by making use of RIE techniques in the anode window definition. The noise temperature measurements have revealed a strong degradation of the noise performance with RIE time, but no significant changes have been observed on the barrier height. Different refinements to the fabrication process that are typically utilized to reduce the effects of RIE damage were tested. The use of thermal treatment at 400 degreesC after the RIE process was found to be the most effective procedure to remove the sources of the measured excess noise, which are attributed to anomalies in the Ga coverage at the metal-semiconductor interface.
PB IEEE- Inst. Electrical Electronics Engineers Inc
SN 0741-3106
YR 2000
FD 2000-11
LK https://hdl.handle.net/20.500.14352/58943
UL https://hdl.handle.net/20.500.14352/58943
LA eng
NO © 2000 IEEE.
DS Docta Complutense
RD 10 abr 2025