RT Journal Article
T1 Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces
A1 Miranda Pantoja, José Miguel
A1 Sebastián Franco, José Luis
AB This work presents a systematic investigation of the influence of reactive ion etching (RIE) on the microwave noise performance of GaAs Schottky diodes. A number of devices has been fabricated by making use of RIE techniques in the anode window definition. The noise temperature measurements have revealed a strong degradation of the noise performance with RIE time, but no significant changes have been observed on the barrier height. Different refinements to the fabrication process that are typically utilized to reduce the effects of RIE damage were tested. The use of thermal treatment at 400 degreesC after the RIE process was found to be the most effective procedure to remove the sources of the measured excess noise, which are attributed to anomalies in the Ga coverage at the metal-semiconductor interface.
PB IEEE- Inst. Electrical Electronics Engineers Inc
SN 0741-3106
YR 2000
FD 2000-11
LK https://hdl.handle.net/20.500.14352/58943
UL https://hdl.handle.net/20.500.14352/58943
LA eng
NO [1] S. Pang, “Surface damage on GaAs induced by reactive ion etching and sputter etching,” J. Electrochem. Soc., vol. 144, pp. 784–787, 1986.[2] T. H. Miers, “Schottky contact fabrication for GaAs MESFET’s,” J. Electrochem. Soc., vol. 129, pp. 1795–1799, 1982.[3] T. Hashizume et al., “A novel in-situ electrochemical process for defect-free Schottky barriers on GaAs and its application to quantum structure contacts,” in Proc. Int. Conf. Advanced Microelectronic Devices and Processing, 1994, pp. 549–554.[4] T. Yasui et al., “Fabrication of quasiintegrated planar Schottky barrier diodes for THz applications,” in Proc. 23rd Int. Conf. Infrared Millimeter Waves, Leeds, U.K., 1998, pp. 88–89.[5] A. Jelenski, A. Grüb, V. Krozer, and H. L. Hartnagel, “New approach to the design and the fabrication of THz Schottky barrier diodes,” IEEE Trans. Microwave Theory Tech., vol. 41, pp. 549–557, 1993.[6] C. I. Lin et al., “Substrateless Schottky diodes for THz applications,” in Proc. Eighth Int. Symp. on Space Terahertz Technology. Cambridge, MA: Harvard Univ., Mar. 1997.[7] J. M. M. Pantoja, A. Grüb, V. Krozer, and J. L. Sebastián, “Accuracy of nonoscillating one-port noise measurements,” IEEE Trans. Instrum. Meas., vol. 44, pp. 853-859, 1995.[8] A. van der Ziel, "Noise in Solid State Devices and Circuits. New York: Wiley, 1986.[9] A. Jelenski, E. Kollberg, and H. Zirath, “Broad band noise mechanisms and noise measurements of metal-semiconductor junctions,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 1193–1201, 1986.[10] H. W. Hübers and H. P. Röser, “Microstructural properties of THz Schottky mixer diodes,” in Proc. 23th Int. Conf. Infrared and mm-Waves, Colchester, U.K., 1998.[11] H. Sugahara, H. Shigekawa, and Y. Nannichi, “Synchrotron radiation photoemission analysis for(NH ) S -treated GaAs,” J. Appl. Phys., vol. 69, pp. 4349-4353, 1991.[12] J. Szuber, G. Hollinger, and E. Bergignat, “Sulfide passivation of GaAs surface,” Electron. Technol., vol. 31, pp. 1–10, 1998.
NO © 2000 IEEE.
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RD 7 may 2024