TY  - JOUR
AU  - Miranda Pantoja, José Miguel
AU  - Sebastián Franco, José Luis
PY  - 2000
DO  - 10.1109/55.877194
SN  - 0741-3106
UR  - https://hdl.handle.net/20.500.14352/58943
T2  - IEEE Electron Device Letters
AB  - This work presents a systematic investigation of the influence of reactive ion etching (RIE) on the microwave noise performance of GaAs Schottky diodes. A number of devices has been fabricated by making use of RIE techniques in the anode window...
LA  - eng
M2  - 515
PB  - IEEE- Inst. Electrical Electronics Engineers Inc
KW  - Noise Measurement
KW  - Schottky Diodes
KW  - Semiconductor Device Noise.
TI  - Influence of reactive ion etching on the microwave trap noise generated in Pt/n-GaAs Schottky diode interfaces
TY  - journal article
VL  - 21
ER  -