%0 Journal Article
%A Feijoo, Pedro Carlos
%A Kauerauf, Thomas
%A Toledano-Luque, María
%A Togo, Misuhiro
%A San Andrés Serrano, Enrique
%A Groeseneken, Guido.
%T Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
%D 2012
%@ 1530-4388
%U https://hdl.handle.net/20.500.14352/98211.2
%X In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-kappa and TiN metal electrode. For the 0.8-nm EOT FinFETs, it is found that TDDB lifetime is consistent with results of planar devices for areas around 10(-8) cm(2), implying that the FinFET architecture does not seem to introduce new failure mechanisms. However, for devices with smaller area, the extrapolated voltage at a ten-year lifetime for soft breakdown (SBD) does not meet the specifications, and as a consequence, the SBD path wear-out will have to be included in the final extrapolation. Furthermore, it is shown that for EOTs smaller than 0.8 nm, the TDDB reliability on n-type FinFETs is challenged by the high leakage currents.
%~