TY  - JOUR
AU  - Feijoo, Pedro Carlos
AU  - Kauerauf, Thomas
AU  - Toledano-Luque, María
AU  - Togo, Misuhiro
AU  - San Andrés Serrano, Enrique
AU  - Groeseneken, Guido.
PY  - 2012
SN  - 1530-4388
UR  - https://hdl.handle.net/20.500.14352/98211.2
T2  - IEEE Transactions on Device and Materials Reliability
AB  - In this paper, the time-dependent dielectric breakdown (TDDB) in sub-1-nm equivalent oxide thickness (EOT) n-type bulk FinFETs is studied. The gate stacks consist of an IMEC clean interfacial layer, atomic layer deposition HfO2 high-kappa and TiN...
LA  - eng
M2  - 166
PB  - Institute of Electrical and Electronics Engineers
KW  - FinFET
KW  - High-kappa
KW  - Reliability
KW  - Scavenging
KW  - Time-dependent dielectric breakdown (TDDB)
TI  - Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs
TY  - journal article
VL  - 12
ER  -