TY  - JOUR
AU  - Algaidy, Sari
AU  - Caudevilla Gutiérrez, Daniel
AU  - Benítez Fernández, Rafael
AU  - Duarte Cano, Sebastián
AU  - Pérez Zenteno, Francisco José
AU  - García Hernansanz, Rodrigo
AU  - San Andrés Serrano, Enrique
AU  - García Hemme, Eric
AU  - Olea Ariza, Javier
AU  - Siegel, Jan
AU  - Gonzalo, José
AU  - Pastor Pastor, David
AU  - Prado Millán, Álvaro Del
PY  - 2025
DO  - 10.1088/1361-6641/adce25
SN  - 0268-1242
UR  - https://hdl.handle.net/20.500.14352/122160
T2  - Semiconductor Science and Technology
AB  - We present a detailed investigation on the properties of supersaturated GaAs using Cr implantation followed by nanosecond pulsed laser melting (PLM). A comparison between two different lasers was carried out (ArF and Nd:YAG). We have analyzed...
LA  - eng
M2  - 055008-1
PB  - IOP Publishing
KW  - gallium arsenide
KW  - ion implantation
KW  - laser processing
KW  - supersaturated semiconductors
TI  - Characterization of Cr implanted GaAs processed with ArF and Nd-YAG laser melting
TY  - journal article
VL  - 40
ER  -